FABRICATION OF COMPOUND SEMICONDUCTOR DEVICE
The overall structure of the cell has to be as precise as it is possible, given that the components involved are operating under extremely demanding conditions. In addition, to prevent unwanted internal losses caused by non-radiative center and the creation of excess heat, the quantity of metallic contaminants has to be minimal. This requirement requires ultra-high purity of the precursors to avoid contamination introduction via the vapors carried through the reaction chamber. Proprietary methods must be used to separate the final chemicals using low impurity levels and stringent handling procedures must be followed to prevent contamination prior to introduction onto the substrate. The vast experience of III-V semiconductor high-brightness LED manufacturing can be accessed to offer chemicals of desired quality in a way that is suitable for high volume use with the level of control that is required to provide the best performance of the device. The material of these b...